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	<title>Comments on: Could Olympus DSLR&#8217;s be Getting a New &#8220;PMOS&#8221; Sensor?</title>
	<atom:link href="http://www.photographybay.com/2009/07/07/could-olympus-dslrs-be-getting-a-new-pmos-sensor/feed/" rel="self" type="application/rss+xml" />
	<link>http://www.photographybay.com/2009/07/07/could-olympus-dslrs-be-getting-a-new-pmos-sensor/</link>
	<description>The latest in digital photography and camera reviews, news and rumors for Canon, Nikon, Sony, Olympus and more.</description>
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		<title>By: Brian</title>
		<link>http://www.photographybay.com/2009/07/07/could-olympus-dslrs-be-getting-a-new-pmos-sensor/#comment-174975</link>
		<dc:creator>Brian</dc:creator>
		<pubDate>Wed, 08 Jul 2009 03:09:25 +0000</pubDate>
		<guid isPermaLink="false">http://www.photographybay.com/?p=6230#comment-174975</guid>
		<description>Stewie don&#039;t know if you are trying to go out of your way to be insulting... I see what you mean on careful reading, though I should think this one is more down to unclear writing. If you want to talk about more than one thing, it probably should be in the title. I skipped over &quot;In addition to this&quot; in the first reading I guess and thought that Samsung was being licensed to make the PMOS for Kodak. I don&#039;t think Kodak has any major FABs.</description>
		<content:encoded><![CDATA[<p>Stewie don&#8217;t know if you are trying to go out of your way to be insulting&#8230; I see what you mean on careful reading, though I should think this one is more down to unclear writing. If you want to talk about more than one thing, it probably should be in the title. I skipped over &#8220;In addition to this&#8221; in the first reading I guess and thought that Samsung was being licensed to make the PMOS for Kodak. I don&#8217;t think Kodak has any major FABs.</p>
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		<title>By: Stewie</title>
		<link>http://www.photographybay.com/2009/07/07/could-olympus-dslrs-be-getting-a-new-pmos-sensor/#comment-174958</link>
		<dc:creator>Stewie</dc:creator>
		<pubDate>Tue, 07 Jul 2009 20:02:20 +0000</pubDate>
		<guid isPermaLink="false">http://www.photographybay.com/?p=6230#comment-174958</guid>
		<description>Brian...

The 10X reduction in power stated in the article is not from the new PMOS sensor, but rather the CCD sensor that Samsung is developing.

You got your EE all wound up thinking you could impress everyone with your knowledge, but in the end, you couldn&#039;t even read the article straight.

Get back to designing chips. LOL</description>
		<content:encoded><![CDATA[<p>Brian&#8230;</p>
<p>The 10X reduction in power stated in the article is not from the new PMOS sensor, but rather the CCD sensor that Samsung is developing.</p>
<p>You got your EE all wound up thinking you could impress everyone with your knowledge, but in the end, you couldn&#8217;t even read the article straight.</p>
<p>Get back to designing chips. LOL</p>
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		<title>By: Brian</title>
		<link>http://www.photographybay.com/2009/07/07/could-olympus-dslrs-be-getting-a-new-pmos-sensor/#comment-174950</link>
		<dc:creator>Brian</dc:creator>
		<pubDate>Tue, 07 Jul 2009 17:45:36 +0000</pubDate>
		<guid isPermaLink="false">http://www.photographybay.com/?p=6230#comment-174950</guid>
		<description>Not really sure why this would be lower power, certainly not 10x lower based on the fact that it is PMOS. CMOS is PMOS + NMOS hence C or complementary. The only difference between the two is that as you try to allude to that PMOS uses holes as the majority carriers in the device, which have a lower mobility. This means that the resistance of the device of equal size would increase. If you wanted a larger resistance for some reason than that might be a good thing. However, you are going to create electron hole pairs, not just holes and Johnson noise goes up with resistance, still we might be in shot noise dominated transport (actually that probably is the case, but I&#039;d have to check), in which case maybe the trade of is okay. In any case, the difference in mobility is less than a factor of 2 so all the properties that would be affected would change by less than 2, certainly not 10. If they get 10 other things are going on.</description>
		<content:encoded><![CDATA[<p>Not really sure why this would be lower power, certainly not 10x lower based on the fact that it is PMOS. CMOS is PMOS + NMOS hence C or complementary. The only difference between the two is that as you try to allude to that PMOS uses holes as the majority carriers in the device, which have a lower mobility. This means that the resistance of the device of equal size would increase. If you wanted a larger resistance for some reason than that might be a good thing. However, you are going to create electron hole pairs, not just holes and Johnson noise goes up with resistance, still we might be in shot noise dominated transport (actually that probably is the case, but I&#8217;d have to check), in which case maybe the trade of is okay. In any case, the difference in mobility is less than a factor of 2 so all the properties that would be affected would change by less than 2, certainly not 10. If they get 10 other things are going on.</p>
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